Comprehensive study of reliability of InGan based laser diodesMARONA, L; SARZYNSKI, M; CZERWINSKI, A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 648504.1-648504.12, issn 0277-786X, isbn 978-0-8194-6598-6, 1VolConference Paper

Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layersKAMLER, G; BORYSIUK, J; WEYHER, J. L et al.Journal of crystal growth. 2005, Vol 282, Num 1-2, pp 45-48, issn 0022-0248, 4 p.Article

Gallium nitride growth on sapphire/GaN templates at high pressure and high temperaturesBOCKOWSKI, M; GRZEGORY, I; KRUKOWSKI, S et al.Journal of crystal growth. 2005, Vol 274, Num 1-2, pp 55-64, issn 0022-0248, 10 p.Article

Defects in GaN single crystals and homoepitaxial structuresWEYHER, J. L; KAMLER, G; NOWAK, G et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 135-142, issn 0022-0248, 8 p.Conference Paper

Formation and thermal decomposition of gallium oxynitride compoundsKAMLER, G; WEISBROD, G; PODSIADŁO, S et al.Journal of thermal analysis and calorimetry. 2000, Vol 61, Num 3, pp 873-877, issn 1388-6150Article

Multi feed seed (MFS) high pressure crystallization of 1―2 in GaNBOCKOWSKI, M; GRZEGORY, I; LUCZNIK, B et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 5-10, issn 0022-0248, 6 p.Conference Paper

Fabrication and properties of GaN-based lasersPERLIN, P; SWIETLIK, T; CZERWINSKI, A et al.Journal of crystal growth. 2008, Vol 310, Num 17, pp 3979-3982, issn 0022-0248, 4 p.Conference Paper

Secrets of GaN substrate properties for high luminousity of InGaN quantum wellsLESZCZYNSKI, M; GRZEGORY, I; PRYSTAWKO, P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69100G.1-69100G.10, issn 0277-786X, isbn 978-0-8194-7085-0, 1VolConference Paper

Selective etching of dislocations in violet-laser diode structuresKAMLER, G; SMALC, J; WOZNIAK, M et al.Journal of crystal growth. 2006, Vol 293, Num 1, pp 18-21, issn 0022-0248, 4 p.Article

High power blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxySKIERBISZEWSKI, C; PERLIN, P; SUSKI, T et al.Semiconductor science and technology. 2005, Vol 20, Num 8, pp 809-813, issn 0268-1242, 5 p.Article

Structural defects in GaN crystals grown by HVPE on needle-shaped GaN seeds obtained under high N₂ pressureSMALC-KOZIOROWSKA, J; KAMLER, G; LUCZNIK, B et al.Journal of crystal growth. 2009, Vol 311, Num 5, pp 1407-1410, issn 0022-0248, 4 p.Article

Platelets and needles : Two habits of pressure-grown GaN crystalsBOCKOWSKI, M; GRZEGORY, I; KAMLER, G et al.Journal of crystal growth. 2007, Vol 305, Num 2, pp 414-420, issn 0022-0248, 7 p.Conference Paper

Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution methodGRZEGORY, M. Bockowski I; NOWAK, G; KAMLER, G et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 612103.1-612103.9, issn 0277-786X, isbn 0-8194-6163-6Conference Paper

Control of Mg doping of GaN in RF-plasma molecular beam epitaxyFEDUNIEWICZ, A; SKIERBISZEWSKI, C; CZERNECKI, R et al.Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 443-448, issn 0022-0248, 6 p.Conference Paper

Properties of InGaN blue laser diodes grown on bulk GaN substratesPERLIN, P; SUSKI, T; KAMLER, G et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 107-114, issn 0022-0248, 8 p.Conference Paper

Bulk GaN single-crystals growthKAMLER, G; ZACHARA, J; PODSIADŁO, S et al.Journal of crystal growth. 2000, Vol 212, Num 1-2, pp 39-48, issn 0022-0248Article

High rate photoelectrochemical etching of GaN and the use of patterned substrates for HVPE regrowthKAMLER, G; LUCZNIK, B; PASTUSZKA, B et al.Journal of crystal growth. 2008, Vol 310, Num 15, pp 3478-3481, issn 0022-0248, 4 p.Article

Crystallization of GaN by HVPE on pressure grown seedsGRZEGORY, I; LUCZNIK, B; BOCKOWSKI, M et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 7, pp 1654-1657, issn 1862-6300, 4 p.Conference Paper

The influence of lattice parameter variation on microstructure of GaN single crystalsKRYSKO, M; SARZYNSKI, M; DOMAGAŁA, J et al.Journal of alloys and compounds. 2005, Vol 401, Num 1-2, pp 261-264, issn 0925-8388, 4 p.Conference Paper

Growth of bulk GaN on GaN/sapphire templates by a high N₂pressure methodBOCKOWSKI, M; GRZEGORY, I; POROWSKI, S et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 12, pp 2685-2688, issn 0370-1972, 4 p.Conference Paper

Defect-selective etching of GaN in a modified molten bases systemKAMLER, G; WEYHER, J. L; GRZEGORY, I et al.Journal of crystal growth. 2002, Vol 246, Num 1-2, pp 21-24, issn 0022-0248Article

HVPE-GaN growth on misoriented ammonothermal GaN seedsSOCHACKI, T; AMILUSIK, M; GRZEGORY, I et al.Journal of crystal growth. 2014, Vol 403, pp 32-37, issn 0022-0248, 6 p.Conference Paper

Structural properties of GaN and Ga_1-xMn_xN layers grown by sublimation sandwich methodKAMINSKI, M; PODSIADLO, S; DOMINIK, P et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 7, pp 1592-1597, issn 1862-6300, 6 p.Article

Growth of bulk GaN by HVPE on pressure grown seedsGRZEGORY, I; LUCZNIK, B; BOCKOWSKI, M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 612107.1-612107.11, issn 0277-786X, isbn 0-8194-6163-6Conference Paper

Growth of GaN on patterned GaN/sapphire substrates by high pressure solution methodBOCKOWSKI, M; GRZEGORY, I; BORYSIUK, J et al.Journal of crystal growth. 2005, Vol 281, Num 1, pp 11-16, issn 0022-0248, 6 p.Conference Paper